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RGP02-12E THRU RGP02-20E
Vishay Semiconductors
formerly General Semiconductor
Case Style GP10E
Glass Passivated Junction Fast Switching Rectifier
Features
Reverse Voltage 1200 to 2000V Forward Current 0.5A
* ted n ate P
0.107 (2.7) 0.080 (2.0) DIA.
1.0 (25.4) MIN.
0.205 (5.2) 0.160 (4.1)
(R)
1.0 (25.4) MIN. 0.026 (0.66) 0.023 (0.58) DIA.
* Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Capable of meeting environmental standards of MIL-S-19500 * For use in high frequency rectifier circuits * Fast switching for high efficiency * Cavity-free glass passivated junction * 0.5 Ampere operation at TA=55C with no thermal runaway * Typical IR less than 0.2A * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Mechanical Data
Case: Molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g
Ratings at 25C ambient temperature unless otherwise specified.
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM RJA RJL TJ, TSTG 1200 840 1200
RGP02 RGP02 RGP02 RGP02 RGP02 RGP02 Symbols -12E -14E -16E -17E -18E -20E 1400 980 1400 1600 1120 1600 1700 1190 1700 0.5 20 65 30 -65 to +175 1800 1260 1800 2000 1400 2000
Units V V V A A C/W C
Electrical Characteristics
Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz
Ratings at 25C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 0.1A TA=25C TA=125C
VF IR trr CJ
1.8 5.0 50 300 5.0
V A ns pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted
Document Number 88699 08-Apr-04
www.vishay.com 1
RGP02-12E THRU RGP02-20E
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 -- Forward Current Derating Curve
Average Forward Rectified Current (A)
0.5 Resistive or Inductive Load 0.4 25
Fig. 2 -- Maximum Non-Repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method)
20
0.3
15
0.2
10
0.1 0.375" (9.5mm) Lead Length 0 25
5
0 50 75 100 125 150 175 1 10 100
Ambient Temperature (C)
Number of Cycles at 60 HZ
Fig. 3 -- Typical Instantaneous Forward Characteristics
1
20
Fig. 4 -- Typical Reverse Characteristics
Instantaneous Reverse Current (A)
10 TJ = 125C
Instantaneous Forward Current (A)
0.1
TJ = 25C Pulse Width = 300s 1% Duty Cycle
1
TJ = 75C 0.1 TJ = 25C
0.01
0.001 0.8
0.01 1.0 1.2 1.4 1.6 1.8 2 2.2 2.4 0 20 40 60 80 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 -- Typical Junction Capacitance
10 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p
Junction Capacitance (pF)
1 1
10
100
Reverse Voltage (V) www.vishay.com 2 Document Number 88699 08-Apr-04

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